2025 (Current Year) Faculty Courses School of Engineering Undergraduate major in Electrical and Electronic Engineering
Electron Devices II
- Academic unit or major
- Undergraduate major in Electrical and Electronic Engineering
- Instructor(s)
- Hitoshi Wakabayashi
- Class Format
- Lecture (Face-to-face)
- Media-enhanced courses
- -
- Day of week/Period
(Classrooms) - 1-2 Mon
- Class
- -
- Course Code
- EEE.D352
- Number of credits
- 100
- Course offered
- 2025
- Offered quarter
- 2Q
- Syllabus updated
- Mar 28, 2025
- Language
- Japanese
Syllabus
Course overview and goals
The performance of VLSI has been improved by scaling in MOS devices and continuous technology processes have been implemented to overcome the scaling limit. The lecture will overview new structures and materials for performance enhancement based on scaling law, and further discuss future MOS devices with novel principle. In addition, memory, as well as image sensors technologies, will be discussed.
Course description and aims
Understanding of the scaling law for advanced MOS devices with new structures and new materials.
Corresponding educational goals are:
(1) Specialist skills Fundamental specialist skills
(4) Applied skills (inquisitive thinking and/or problem-finding skills) Organization and analysis
(7) Skills acquiring a wide range of expertise, and expanding it into more advanced and other specialized areas
Student learning outcomes
実務経験と講義内容との関連 (又は実践的教育内容)
The following practical experience is all related to the lecture content.
/ Advanced CMOS research and development at NEC Corporation (April 1993 to March 2006)
/ Advanced CMOS and semiconductor device research and development at Sony Corporation (April 2006 to December 2012)
Keywords
MOSFET, 3D channel, high mobility channel, memory, image sensors
Competencies
- Specialist skills
- Intercultural skills
- Communication skills
- Critical thinking skills
- Practical and/or problem-solving skills
- / Applied specialist skills on EEE
Class flow
Overview of advanced MOS devices using handouts. A reporting assignment will be given at the last lecture.
Course schedule/Objectives
| Course schedule | Objectives | |
|---|---|---|
| Class 1 | Advanced MOS devices and scaling law | Scaling law |
| Class 2 | Issues in advanced MOS devices | Short channel effect, ballistic transport |
| Class 3 | Advanced MOS devices: 3D channel | FinFET, Si nanowire FET |
| Class 4 | Advanced MOS devices: high mobility channel | high mobility channel |
| Class 5 | MOS devices based on novel operating principals | Tunnel FET, negative capacitances |
| Class 6 | Memory devices: SRAM, DRAM, Flash and other memories | SRAM, DRAM, Flash memory |
| Class 7 | CMOS image sensors | CMOS image sensor |
Study advice (preparation and review)
To enhance effective learning, students are encouraged to spend approximately 100 minutes preparing for class and another 100 minutes reviewing class content afterward (including assignments) for each class.
They should do so by referring to the hand-outs of the course material.
Textbook(s)
N/A
Reference books, course materials, etc.
Fundamentals of Modern VLSI Devices, Y. Taur and T. Ning, Cambridge University Press, 2nd Ed. 2009
Evaluation methods and criteria
Evaluation is based on the report assigned in the last lecture. The short exams will require basic knowledge of electrostatics, solid-state physics, and mathematics. There will be no final exam for this course.
Related courses
- ZIB.C403 ： Electronic Properties of Semiconductors
Prerequisites
Electromagnetism