2024 Faculty Courses School of Materials and Chemical Technology Undergraduate major in Materials Science and Engineering
Fundamentals of Single Crystal and Thin Film Processing
- Academic unit or major
- Undergraduate major in Materials Science and Engineering
- Instructor(s)
- Hiroshi Funakubo
- Class Format
- Lecture (Face-to-face)
- Media-enhanced courses
- -
- Day of week/Period
(Classrooms) - 1-2 Mon / 1-2 Thu
- Class
- -
- Course Code
- MAT.C315
- Number of credits
- 200
- Course offered
- 2024
- Offered quarter
- 3Q
- Syllabus updated
- Mar 14, 2025
- Language
- Japanese
Syllabus
Course overview and goals
This course will provide the basic knowledge of the oxide thin film deposition and the oxide single crystal growth. In the thin film deposition, the deposition methods through gas phase and the characterization method of the thin film will be explained. In the latter parts, the basic theory of the single crystal growth and various single crystal growth methods will be explained. Moreover, crystal defects will be explained.
Course description and aims
At the end of this course, students will be able to:
1) Have the basic understanding of the thin film deposition process through vapor phase.
2) Have the understandings of the thin film deposition by PVD process and CVD process.
3) Have the brief knowledge of the characterization method for the thin film.
4) Have the basic understanding of the bulk crystal growth process through liquid phase.
5) Have the understandings of various bulk crystal growth methods.
6) Have the understanding of crystal defects and their behavior.
Keywords
thin film, PVD, CVD, epitaxial thin film, film formation mechanism, nucleation, crystal growth, driving forces, crystal growth speed, phase diagram, crystal defects
Competencies
- Specialist skills
- Intercultural skills
- Communication skills
- Critical thinking skills
- Practical and/or problem-solving skills
Class flow
In the first half, students will learn the basics of the thin film deposition in English. In the latter half, students will learn the single crystal growth in Japanese. Exercise problems will be given.
Course schedule/Objectives
| Course schedule | Objectives | |
|---|---|---|
| Class 1 | General Introduction: sample shape, vacuum science and technology | Students have to explain the fundamental of vacuum technology |
| Class 2 | PVD processes (I): vacuum pumps and systems, physics and chemistry of evaporation, evaporation hardware and techniques. | Students have to explain the vacuum chamber and vacuum system. |
| Class 3 | PVD processes (II): glow discharges and plasmas, sputtering processes, sputtering hardware and techniques. | Students have to explain the PVD method, plasma and sputtering. |
| Class 4 | CVD processes (I): reaction types, thermodynamics of CVD, gas transport, growth kinetics. | Students have to explain the CVD method, gas transportation and kinetics of thin film growth. |
| Class 5 | CVD processes (II) & solution based methods: CVD processes and systems, solution-based methods. Film formation and structure (I): capillarity theory, atomistic nucleation processes (1). | Students have to explain the CVD apparatus and nucleation. |
| Class 6 | Introduction to single crystal growth: single crystals and applications, Single crystal growth method 1 | Students have to explain the single crystals and their applications. |
| Class 7 | Introduction to single crystal growth: Single crystal growth method 2 | Students have to explain the manufacturing methods of the single crystals. |
| Class 8 | Crystal growth theory I: Single crystal, driving force of crystal growth, nucleation | Students have to explain the driving force of the crystal growth and the nucleation. |
| Class 9 | Crystal growth theory II: growth rate of single crystal, | Students have to explain the growth rate of single crystal. |
| Class 10 | Crystal growth theory III: mechanism of crystal growth, equilibrium form, growth form | Students have to explain the mechanisms of the single crystal growth. |
| Class 11 | Crystal growth and phase diagram: kinds of phase diagram and growth methods | Students have to design the single crystal growth method base on the phase diagram. |
| Class 12 | Crystal defect : kind of lattice defects, defect and crystal structure, description of defects form | Students have to explain the kinds of defects and their notations. |
| Class 13 | Film formation and structure (II): atomistic nucleation processes (2), cluster coalescence and depletion, grain structure of films. Epitaxial film growth: structural aspects, lattice misfit and imperfections, growth methods. | Students have to explain the epitaxial thin film and perfection of thin film crystal. |
| Class 14 | Characterization of films: Film thickness, Composition, Crystal structure and Chemical bond | Students have to explain the characterization method of film. |
Study advice (preparation and review)
To enhance effective learning, students are encouraged to spend approximately 100 minutes preparing for class and another 100 minutes reviewing class content afterwards (including assignments) for each class.
They should do so by referring to textbooks and other course material.
Textbook(s)
None required.
Reference books, course materials, etc.
All materials used in class are distributed in class fittingly.
Referencd books,
Kuroda, Kessho ha Ikiteiru, Science-sha (1989)
The Japanese Association for Crystal Growth ed., Hangook of Crystal Growth, Kyoritsu-Shuppan (1995)
Milton Ohring, The Materials Science of Thin Films, Academic Press (2002)
S. Wolf and R.N. Tauber, Silicon processing for the VLSI Era: Vol.1-Process Technology, Lattice Press (1999)
Evaluation methods and criteria
Students’ course scores are based on final exams, exercise problems, and reports.
Related courses
- MAT.C206 ： Ceramic Processing
Prerequisites
No prerequisites are necessary.