2024 Faculty Courses School of Engineering Undergraduate major in Electrical and Electronic Engineering
Memory Devices
- Academic unit or major
- Undergraduate major in Electrical and Electronic Engineering
- Instructor(s)
- Kuniyuki Kakushima
- Class Format
- Lecture (Face-to-face)
- Media-enhanced courses
- -
- Day of week/Period
(Classrooms) - 5-6 Tue
- Class
- -
- Course Code
- EEE.D371
- Number of credits
- 100
- Course offered
- 2024
- Offered quarter
- 3Q
- Syllabus updated
- Mar 14, 2025
- Language
- Japanese
Syllabus
Course overview and goals
Various memory devices have been implemented in digital integrated circuits depending on the speed or volume requirements. The lecture will include the memory hierarchy and its specification. The structure of each memory (SRAM, DRAM, Flash, FeRAM, MRAM, RRAM, PCRAM, etc.), its physical operation mechanism, and the peripheral circuits will be explained. In addition, recent development trends will be reviewed.
Course description and aims
Students who take the course will understand the memory hierarchy, its required specifications, and the memory operation principles of each device. They can assess which part of the hierarchy should implement the memory devices from the specification.
Keywords
memory system, memory hierarchy, SRAM, DRAM, Flash, FeRAM, MRAM, RRAM, PCRAM, peripheral circuits
Competencies
- Specialist skills
- Intercultural skills
- Communication skills
- Critical thinking skills
- Practical and/or problem-solving skills
- ・Fundamental specialist skills in EEE
Class flow
The lecture will use slides. An exercise will be delivered at each lecture.
Course schedule/Objectives
| Course schedule | Objectives | |
|---|---|---|
| Class 1 | Basics of semiconductor and memory system | Operation of semiconductor device, memory hierarchy, operation of memory devices |
| Class 2 | SRAM (static random access memory) | CMOS inverter, bi-stable circuit, flip-flop, latch, SRAM |
| Class 3 | DRAM (dynamic random access memory) | Capacitor, refresh, DRAM, device scaling |
| Class 4 | Flash memory | Charge trapping, threshold, three-dimensional architecture, non-volatile memory |
| Class 5 | FeRAM (ferroelectric random access memory) | Ferroelectric material, spontaneous polarization, polarization reversal, non-volatile memory |
| Class 6 | MRAM (magnetic random access memory) | Magnetic tunnel junction, magnetic spin reversal, MRAM, non-volatile memory |
| Class 7 | Other nonvolatile memory, analog memory | Resistive memory, phase-change memory, analog memory, in-memory computing |
Study advice (preparation and review)
To enhance effective learning, students are encouraged to read and understand research and academic journals on the topic of each lecture.
Textbook(s)
Not specified
Reference books, course materials, etc.
Course materials will be provided
Evaluation methods and criteria
Evaluation will be based on each exercise and term-end report. (exercise 20%, report 80%)
Related courses
- EEE.C341 ： Integrated Circuit Technology Integrated Circuit Technology
- EEE.D352 ： Electron Devices II
- EEE.C321 ： Digital Electronic Circuits
Prerequisites
Not particularly