2020 Faculty Courses School of Engineering Undergraduate major in Electrical and Electronic Engineering
Semiconductor Fabrication Process
- Academic unit or major
- Undergraduate major in Electrical and Electronic Engineering
- Instructor(s)
- Shun-Ichiro Ohmi
- Class Format
- Lecture (Zoom)
- Media-enhanced courses
- -
- Day of week/Period
(Classrooms) - 5-6 Tue (S223)
- Class
- -
- Course Code
- EEE.D391
- Number of credits
- 100
- Course offered
- 2020
- Offered quarter
- 3Q
- Syllabus updated
- Jul 10, 2025
- Language
- Japanese
Syllabus
Course overview and goals
Principles and limitations of micro-fabrication process in semiconductor devices for high-speed operation are described. After explanation of requirement of simultaneous miniaturization in vertical direction and lateral dsirection for high speed operations, latest technology with focus on lithography are explained. Then, diffusionregion, etching, oxidation, film deposition, and metallization are described.
Course description and aims
By the end of this course, students will be able to:
1) Explain outlines of semiconductor processes which fabricated integrated circuit for popularization of low-cost and high-speed electric circuits.
2) Understand the guidelines for higher integration and speed.
3) Understand the method for miniaturization based on the scaling from principle operation of MOSFETs.
Keywords
Lithography, diffusion region, etching, oxidation, film deposition, metallization
Competencies
- Specialist skills
- Intercultural skills
- Communication skills
- Critical thinking skills
- Practical and/or problem-solving skills
- ・Applied specialist skills on EEE
Class flow
Because of the large amount of knowledge, basic problems will be explained during the lecture. Any textbook or notebook is able to be used for the examination.
Course schedule/Objectives
| Course schedule | Objectives | |
|---|---|---|
| Class 1 | Requirements of semiconductor fabrication process and basis of optical lithography | Calculation of diffraction images with or without alternative phase shift method |
| Class 2 | Present and future status of optical lithography and electron beam lithography | Calculation of proximity correction in electron beam lithography |
| Class 3 | Short channel effect and doped region | Evaluation of contact resistivity |
| Class 4 | Scaling and oxide | Calculation of SiO2 thickness |
| Class 5 | Strained silicon, multi-gate, crystal growth, SOI、etching | Anisotropic etching of Si |
| Class 6 | Present memory structure, delay of wiring, TSV, deposition | Calculation of wiring delay |
| Class 7 | Examination |
Study advice (preparation and review)
To enhance effective learning, students are encouraged to spend approximately 100 minutes preparing for class and another 100 minutes reviewing class content afterwards (including assignments) for each class.
They should do so by referring to textbooks and other course material.
Textbook(s)
N/A
Reference books, course materials, etc.
Distributed by OCW-i
Evaluation methods and criteria
Evaluate based on the students' knowledge of semiconductor processes.
Report 20%, Examination 80%
Related courses
- EEE.D351 ： Electron Devices I
- EEE.D352 ： Electron Devices II
Prerequisites
NA